Transistors with an extension region having strips of differing conductivity type

ABSTRACT

A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.

RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.12/639,158, filed Dec. 16, 2009, titled “TRANSISTORS WITH AN EXTENSIONREGION HAVING STRIPS OF DIFFERING CONDUCTIVITY TYPE AND METHODS OFFORMING THE SAME,” and issued as U.S. Pat. No. 8,815,667 on Aug. 26,2014, which is commonly assigned and incorporated in its entirety hereinby reference.

FIELD

The present disclosure relates generally to transistors and inparticular the present disclosure relates to transistors with anextension region having strips of differing conductivity type andmethods of forming the same.

BACKGROUND

Transistors, such as field effect transistors (FETs), having highbreakdown voltages (e.g., above about 15 to about 80 volts or greater)are used in various applications, such as power management oramplification and for driver systems. For example, the breakdown voltagemay be defined as the voltage at which the drain (or source) breaks downwhile the transistor is turned off. In addition, transistors having highbreakdown voltages may be used on the periphery of a memory device. Forexample, these transistors can be located between charge pumps and thestring drivers of a memory device that provide voltages to the accesslines (e.g., word lines) and can be used in charge pump circuitry andfor the string drivers.

One technique for creating transistors with high breakdown voltages usesa lightly doped region between the drain and control gate of thetransistor. This region is sometimes referred to as a drain extensionregion. Devices that use this technique are sometimes referred to asReduced Surface Field (RESURF) devices.

Transistors with high breakdown voltages sometimes have differentbreakdown-voltage versus drain-extension-region-doping-level curves(e.g., doping curves), as shown in FIG. 1. For example, doping curve 100may be for one transistor and the doping curve 100′ may be for anothertransistor.

It is sometimes desirable to dope the transistors concurrently in asingle doping step during fabrication in that multiple doping steps addprocess steps and thus fabrication costs. The problem with this is thatthe doping may correspond to the peak breakdown voltage for onetransistor (e.g., as indicated by point A), whereas that doping maycorrespond a relatively low breakdown voltage for the other transistor(e.g., as indicated by point A′). For example, the breakdown voltage atpoint A′ may be too low for the intended application. Therefore, thedoping is sometimes adjusted to compromise so that all of thetransistors have breakdown voltages that are sufficient for theirintended applications.

For example, the doping may be adjusted to correspond to the point B,where doping curves 100 and 100′ cross and where the breakdown voltageis sufficient for the applications intended for the respectivetransistors. Note that point B corresponds to over doping (e.g., thedoping exceeds that which produces the maximum breakdown voltage) thetransistor with doping curve 100 and under doping (e.g., the doping isbelow that which produces the maximum breakdown voltage) the transistorwith doping curve 100′.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foralternative transistor structures and methods of their formation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates breakdown-voltage versusdrain-extension-region-doping-level curves of theoretical prior artdevices.

FIG. 2 is a top view of an embodiment of a transistor during a stage offabrication, according to an embodiment.

FIG. 3 is a cross-section view taken along line 3-3 of FIG. 2.

FIG. 4 is a cross-section view taken along line 4-4 of FIG. 2,illustrating doping of an extension region of the transistor of FIG. 2,according to another embodiment.

FIG. 5 is a top view of the transistor of FIG. 2 during another stage offabrication, according to another embodiment.

FIG. 6 is a cross-section view taken along line 6-6 of FIG. 5.

FIG. 7 is a cross-section view taken along line 7-7 of FIG. 5.

FIG. 8 is a top view of the transistor of FIG. 2 during another stage offabrication, according to another embodiment.

FIG. 9 is a cross-section view taken along line 9-9 of FIG. 8.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof, and in which is shown, byway of illustration, specific embodiments. In the drawings, likenumerals describe substantially similar components throughout theseveral views. Other embodiments may be utilized and structural,logical, and electrical changes may be made without departing from thescope of the present disclosure. The term semiconductor can refer to,for example, a layer of material, a wafer, or a substrate, and includesany base semiconductor structure. “Semiconductor” is to be understood asincluding silicon-on-sapphire (SOS) technology, silicon-on-insulator(SOI) technology, thin film transistor (TFT) technology, doped andundoped semiconductors, epitaxial layers of a silicon supported by abase semiconductor structure, as well as other semiconductor structureswell known to one skilled in the art. Furthermore, when reference ismade to a semiconductor in the following description, previous processsteps may have been utilized to form regions/junctions in the basesemiconductor structure, and the term semiconductor can include theunderlying layers containing such regions/junctions. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present disclosure is defined only by the appendedclaims and equivalents thereof.

FIG. 2 is a top view of an electronic device, such as a transistor 102;FIG. 3 is a cross-section view taken along line 3-3 of FIG. 2; and FIG.4 is a cross-section view taken along line 4-4 of FIG. 2. FIGS. 2-4illustrate transistor 102 after several processing steps have occurred.

Transistor 102 may be a high-voltage transistor having a breakdownvoltage above about 15 to about 80 volts or greater, e.g., about 20 toabout 35 volts for some embodiments and about 30 volts for otherembodiments. Note that the breakdown voltage may be defined as thevoltage at which the drain (or source) breaks down while the transistoris turned off. Transistor 102 may be a field effect transistor (FET),such as a field effect transistor operating in a depletion mode. Forexample, a field effect transistor operating in a depletion mode mayhave a threshold voltage less than about 0V, e.g., typically about −5Vto about −2V. For one embodiment, transistor 102 may be a ReducedSurface Field (RESURF) device. For other embodiments, transistor 102 maybe an accumulation type transistor, e.g., with a threshold voltagewithin an operating range of about 0.3 V to about 1.5 V or anaccumulation type transistor with a low threshold voltage, e.g., athreshold voltage less than about 0.3 V down to about 0V.

Transistor 102 may be used on the periphery of a memory device. Forexample, one or more transistors 100 may be located between charge pumpsand the string drivers of a memory device and may be used in charge pumpcircuitry and as the string drivers. Note that string drivers arehigh-voltage devices that pass voltage to access lines (e.g., wordlines) of a memory device. One or more transistors 100 may be used ashigh-voltage switches in one embodiment.

For one embodiment, transistor 102 may be formed by forming a gatedielectric 110, e.g., an oxide or other dielectric material, over asemiconductor 105, such as monocrystalline silicon or the like. Aportion of semiconductor 105 may be doped to have a region 120 having afirst conductivity type (e.g., a p-type conductivity region). As anexample, the region 120 may be doped with a boron (B) or another p-typeimpurity. For example, region 120 having the first conductivity type mayform a p-well within semiconductor 105.

A conductor 125 is formed over gate dielectric 110. For example,conductor 125 may comprise, consist of, or consist essentially ofconductively doped polysilicon and/or may comprise, consist of, orconsist essentially of metal, such as a refractory metal, or ametal-containing material, such as a refractory metal silicide layer, aswell as any other conductive material. The metals of chromium (Cr),cobalt (Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), tantalum (Ta),titanium (Ti), tungsten (W), vanadium (V) and zirconium (Zr) aregenerally recognized as refractory metals.

A mask 130 is formed over conductor 125 and is patterned for exposingportions of conductor 125 for removal. Patterned mask 130 includes maskportion 130 ₁ and mask strips 130 ₂ and 130 ₃ on either side of maskportion 130 ₁. As one example, mask 130 is a patterned photoresist as iscommonly used in semiconductor fabrication.

The exposed portions of conductor 125 are then removed, such as byetching, stopping on or within gate dielectric 110, thereby exposingportions of gate dielectric 110. Removal of the exposed portions ofconductor 125 forms a control gate 125 ₁ and conductor strips 125 ₂ and125 ₃, on either side of control gate 125 ₁, from conductor 125. Forexample, strips of conductor 125 are removed to expose portions of gatedielectric 110.

Conductor strips 125 ₂ and 125 ₃ are formed concurrently (e.g.,substantially concurrently) with control gate 125 ₁, e.g., during thesame processing step, and do not add any processing steps, other thanthe patterning for the conductor strips, to those that would otherwiseoccur when forming the control gate 125 ₁ without conductor strips 125 ₂and 125 ₃. That is, the patterning for conductor strips 125 ₂ and 125 ₃occurs as part of the patterning for control gate 125 ₁.

Conductor strips 125 ₂ and mask strips 130 ₂ are located in asource/drain extension region 140 ₁, e.g., a drain extension region, oftransistor 102, and conductor strips 125 ₃ and mask strips 130 ₃ arelocated in a source/drain extension region 140 ₂, e.g., a sourceextension region, of transistor 102. As described below, each extensionregion will be interposed between control gate 125 ₁ and a source/drainregion of transistor 102. The conductor strips and the portions ofconductor 125 within the extension regions that are removed respectivelyalternately block and expose gate dielectric 110, as shown in FIG. 4.

After removing the portions of conductor 125, extension regions 140 ₁and 140 ₂ are conductively doped to have a second conductivity typedifferent than the first conductivity type, e.g., an n-typeconductivity. For example, the extension regions 140 ₁ and 140 ₂ can beconductively doped with impurities, such as n-type impurities. N-typeimpurities may comprise, consist of, or consist essentially of antimony(Sb), arsenic (As), phosphorus (P), etc. That is, extension regions 140₁ and 140 ₂ may be implanted to an n-type conductivity type.

During the implantation, as shown in FIG. 4 for extension region 140 ₁,n-type impurities are prevented (e.g., substantially prevented) frombeing implanted into at least a portion of the portions of p-type region120 that directly underlie conductor strips 125 ₂ so that the regionsbetween conductor strips 125 ₂ receive the n-type impurities. That is,the conductor strips 125 ₂ and the mask strips 130 ₂ formed overconductor strips 125 ₂ block the n-type impurities and prevent (e.g.,substantially prevent) the n-type impurities from being implanted in atleast a portion of the portions of p-type region 120 that directlyunderlie, e.g., that are vertically aligned with, conductor strips 125₂. Similarly, for extension region 140 ₂, the conductor strips 125 ₃ andthe mask strips 130 ₃ formed over conductor strips 125 ₃ block then-type impurities and prevent (e.g., substantially prevent) the n-typeimpurities from being implanted in at least a portion of the portions ofp-type region 120 that directly underlie, e.g., that are verticallyaligned with, conductor strips 125 ₃.

The portions of p-type region 120 that are implanted with n-typeimpurities form n⁻-type strips 325 in p-type region 120 within therespective extension regions, as shown in FIGS. 4 and 5. The n⁻ denotesthat strips 325 are lightly doped, e.g., to a dose level (an implantdensity) of about 2×10¹²/cm² to about 5×10¹²/cm² for some embodiments.The p-type regions under conductor strips 125 ₂ and 125 ₃ form p-typestrips 330 within each extension region. For example, the p-type strips330 and n⁻-type strips 325 alternate within each of the extensionregions, as shown in FIG. 4, producing a plurality of p-n junctions,i.e., junctions of differing conductivity types, within each of theextension regions. That is, there may be p-n junction at the sides andbottom of each of the n⁻-type strips 325.

During the n-type impurity implantation, conductor strips 125 ₂ and 125₃ respectively cover portions of gate dielectric 110 and p-type region120 corresponding p-type strips 330, as shown in FIG. 4. During then-type impurity implantation, portions of transistor 102 other than theextension regions may be prevented from receiving the n⁻-typeimpurities, e.g., by a suitable mask (not shown).

After the implantation, mask portion 130 ₁ and mask strips 130 ₂ and 130₃ are removed, e.g., by etching, ashing or cleaning, exposing controlgate 125 ₁ and conductor strips 125 ₂ and 125 ₃. For one embodiment,conductor strips 125 ₂ and 125 ₃ may be optionally removed while controlgate 125 ₁ is protected, e.g., with a mask. For another embodiment, maskportion 130 ₁ and mask strips 130 ₂ and 130 ₃ may be removed before then-type impurity implantation.

Source/drain regions 440 and 442 are formed in p-type region 120, e.g.,after the removal of mask portion 130 ₁ and mask strips 130 ₂ and 130 ₃,as shown in FIGS. 5 and 6. For example, source/drain regions 440 and 442may be formed by doping to create n+-regions. The n⁺ denotes thatsource/drain regions 440 and 442 are doped with a higher dose level thanstrips 325, e.g., source/drain regions 440 and 442 may receive a doselevel that is about three orders of magnitude greater than that receivedby strips 325 for some embodiments. For example, source/drain regions440 and 442 may receive a dose level (an implant density) of about1×10¹⁵/cm². For some embodiments, source/drain regions 440 and 442 mayextend an entire width of transistor 102, as shown in FIG. 4. During theformation of source/drain regions 440 and 442, the extension regions maybe protected, e.g., using a mask. For other embodiments, source/drainregions 440 and 442 may be doped with a different impurity than strips325. For example, source/drain regions 440 and 442 may be doped with oneof antimony (Sb), arsenic (As), or phosphorus (P), and strips 325 may bedoped with an other of antimony (Sb), arsenic (As), or phosphorus (P).

A dielectric 550, e.g., bulk dielectric material, may then formed overthe source/drain regions 440 and 442, control gate 125 ₁, and extensionregions 140 ₁ and 140 ₂, as shown in FIGS. 6 and 7. Note that FIG. 6 isa cross-section view taken along line 6-6 of FIG. 5, and FIG. 7 is across-section view taken along line 7-7 of FIG. 5, where dielectric 550is omitted in FIG. 5 for purposes of clarity. One example for dielectric550 would be a doped silicate glass. Examples of doped silicate glassesinclude BSG (borosilicate glass), PSG (phosphosilicate glass), and BPSG(borophosphosilicate glass). Another example for dielectric 550 would beTEOS (tetraethylorthosilicate).

A mask (not shown) may be formed over dielectric 550 and patterned toexpose portions of dielectric 550 directly over (e.g., verticallyaligned with) source/drain regions 440 and 442 for removal. The exposedportions of dielectric 550 directly over source/drain regions 440 and442 are removed, such as by etching, stopping on or within source/drainregions 440 and 442 to form contact openings, such as contact holes 560,as shown in FIGS. 5 and 6. The mask is removed, and contacts 570 areformed in contact holes 560, e.g., in direct physical contact withsource/drain regions 440 and 442, from a conductor. For example,contacts 570 ₁ may be drain contacts and contacts 570 ₂ source contacts.

Alternatively, instead of forming contacts 570 ₁ and 570 ₂ in contactholes 560, a contact 570 ₁ and a contact 570 ₂ may be respectivelyformed in contact slots formed in dielectric 550 and, e.g., respectivelysubstantially spanning the width W of the source/drain regions 440 and442, and thus of transistor 102.

The conductor of contacts 570 may, for example, comprise, consist of, orconsist essentially of a metal or metal-containing layer and may bealuminum, copper, a refractory metal, or a refractory metal silicidelayer. Alternatively, the conductor may contain multiplemetal-containing layers, e.g., a titanium nitride (TiN) barrier layerformed over (e.g., in direct physical contact with) source/drain regions440 and 442, a titanium (Ti) adhesion layer formed over the barrierlayer, and a tungsten (W) layer formed over the adhesion layer.

Alternatively, dielectric 550 may be formed before the formation ofsource/drain regions 440 and 442. The contact slots are then formed indielectric 550, exposing portions of p-type region 120. Then, theexposed portions p-type region 120 are doped through the contact slotsto form a n+-type source/drain region within p-type region 120 at thebottom of each contact slot.

For another embodiment, the contact holes 560 are formed in dielectric550 exposing portions of p-type region 120. Then, the exposed portionsp-type region 120 are doped through the contact holes 560 to form ann+-type source/drain region within p-type region 120 at the bottom ofeach contact hole 560, as shown in FIGS. 8 and 9. A benefit of this isthat the n+-type implant is self-aligned to the contact opening,allowing for a slightly smaller contact-to-gate design rule. Note thatFIG. 9 is a cross-section view taken along line 9-9 of FIG. 8, wheredielectric 550 is omitted from FIG. 8 for purposes of clarity.

The contacts 570 are subsequently formed in contact holes 560, asdescribed above. This results in a plurality of separated source/drainregions 440 and separated source/drain regions 442 respectivelylocalized under (e.g., in direct physical contact with) contacts 570 ₁and contacts 570 ₂. For example, contacts 570 ₁ in FIG. 8 respectivelycorrespond to individual, separated source/drain regions 440 on aone-to-one basis, and contacts 570 ₂ respectively correspond toindividual, separated source/drain regions 442 on a one-to-one basis.Note that source/drain regions 440 may be formed at the ends of n⁻-typestrips 325 within extension region 140 ₁, and source/drain regions 442may be formed at the ends of n⁻-type strips 325 within extension region140 ₂, as shown in FIG. 9.

For one embodiment, transistor 102 may only have one extension region,such as extension region 140 ₁. For another embodiment, there may bedifferent number of n⁻-type strips 325 in extension region 140 ₁ than inextension region 140 ₂.

The presence of the alternating n⁻-type strips 325 and p-type strips 330in at least one of the extension regions acts to shift thebreakdown-voltage versus drain-extension-region-doping-level curve(e.g., doping curve) of transistor 102 to higher doping levels. That is,a given breakdown voltage occurs at a higher doping level whenalternating n⁻-type strips 325 and p-type strips 330 are present in atleast one of the extension regions, as opposed to when an n⁻-typeextension region is over the p-type region 120 with no alternatingn⁻-type strips 325 and p-type strips 330 as is typical in conventionalRESURF transistors. This is because during bias conditions, lateralelectric fields 710 develop in the p-type strips 330 between successiven⁻-type strips 325, owing to the p-n junctions at the sides n⁻-typestrips 325 (FIG. 7), in addition to the vertical electric fields 720 inthe p-type region 120, owing to the p-n junctions the bottoms of n⁻-typestrips 325.

The lateral electric fields 710 act to enhance the depletion in theextension regions over that when an n⁻-type extension region is over thep-type region 120 with no alternating n⁻-type strips 325 and p-typestrips 330. In this case, only vertical electric fields 720 occur in thein the p-type region 120, owing to the p-n junction at the bottom of then⁻-type extension region. Therefore, a higher doping level is utilizedto produce a given breakdown voltage. For example, the doping curve oftransistor 102 may shift from having doping curve 100 in FIG. 1 tohaving the doping curve doping curve 100′ due to the presence of thealternating n⁻-type strips 325 and p-type strips 330 in at least one ofthe extension regions.

The amount by which the doping curve shifts is generally sensitive tothe ratio of the width W_(p) of the p-type strips 330 to the width W_(n)of the n⁻-type strips 325 (FIG. 7). For example, the amount by which thedoping curve shifts may increase as the ratio (W_(p)/W_(n)) of the widthof the p-type strips 330 to the width of the n⁻-type strips 325increases. For one embodiment, the ratio W_(p)/W_(n) in each of theextension regions is about 1:1 or less. The ratio W_(p)/W_(n) in each ofthe extension regions may be greater than about 1:1, however.

Note that adjusting the ratio W_(p)/W_(n) and/or the number of n⁻-typestrips 325 in at least one extension region enables the doping curve tobe adjusted, e.g., the doping level at which the peak breakdown voltageoccurs to be adjusted. For example, adjusting the ratio W_(p)/W_(n)and/or the number of n⁻-type strips 325 in a plurality of transistors,e.g., on a periphery of a memory device, can adjust the doping curves ofthese transistors so that the doping levels at which their respectivepeaks occur substantially coincide or are at least closer to each other.As such, a single doping level can be used produce the peak (or nearpeak) bias voltage in the plurality of transistors that might otherwisehave different peak doping levels.

CONCLUSION

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe embodiments will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the embodiments. It is manifestly intended that theembodiments be limited only by the following claims and equivalentsthereof.

What is claimed is:
 1. A transistor, comprising: a gate dielectric overa semiconductor having a first conductivity type; a control gate overthe gate dielectric; source and drain regions having a secondconductivity type in the semiconductor having the first conductivitytype; and strips having the second conductivity type within thesemiconductor having the first conductivity type and interposed betweenthe control gate and at least one of the source and drain regions;wherein a portion of the semiconductor having the first conductivitytype extends from one strip having the second conductivity type to anadjacent strip having the second conductivity type in a directionorthogonal to a direction extending from the source region to the drainregion.
 2. The transistor of claim 1, further comprising a conductorstrip over the gate dielectric and covering the portion of thesemiconductor having the first conductivity type that extends betweenthe adjacent strips having the second conductivity type.
 3. Thetransistor of claim 2, wherein the control gate and the conductor stripare polysilicon and wherein the first and second conductivity types arerespectively p-type and n-type.
 4. The transistor of claim 1, wherein awidth of the adjacent strips having the second conductivity type issubstantially the same width as the portion of the semiconductor havingthe first conductivity type that extends between the adjacent stripshaving the second conductivity type.
 5. The transistor of claim 1,wherein the source/drain regions have a dose level of impurities of thesecond conductivity type that is about three orders of magnitude greaterthan a dose level of impurities of the second conductivity in the stripshaving the second conductivity type.
 6. The transistor of claim 1,wherein strips having the second conductivity type interposed betweenthe control gate and at least one of the source and drain regionscomprises strips having the second conductivity type between the controlgate and both of the source and drain regions.
 7. The transistor ofclaim 6, wherein a number of strips having the second conductivity typewithin the semiconductor having the first conductivity type interposedbetween the control gate and the one of the source and drain regions isthe same as a number of strips having the second conductivity typewithin the semiconductor having the first conductivity type interposedbetween the control gate and an other one of the source and drainregions.
 8. The transistor of claim 1, wherein the transistor is aReduced Surface Field device and/or has a breakdown voltage of about 30volts.
 9. The transistor of claim 1, wherein the transistor forms partof a memory device.
 10. The transistor of claim 1, further comprising acontact coupled to the source region and a contact coupled to the drainregion.
 11. The transistor of claim 10, wherein a contact being coupledto the source region comprises a plurality of contacts coupled to a samesource region and a contact being coupled to the drain region comprisesa plurality of contacts coupled to a same drain region.
 12. Atransistor, comprising: a gate dielectric over a semiconductor having afirst conductivity type; a control gate over the gate dielectric; sourceand drain regions having a second conductivity type in the semiconductorhaving the first conductivity type; strips having the secondconductivity type within the semiconductor having the first conductivitytype and interposed between the control gate and at least one of thesource and drain regions; and a plurality of conductor strips over thegate dielectric, the conductor strips respectively covering portions ofthe semiconductor having the first conductivity type that are betweenthe strips having the second conductivity type that are interposedbetween the control gate and the at least one of the first and secondsource/drain regions; wherein the strips having the second conductivitytype within the semiconductor that are interposed between the controlgate and the at least one of the first and second source/drain regionsand the portions of the semiconductor having the first conductivity typethat are between the strips having the second conductivity typealternate.
 13. The transistor of claim 12, wherein a ratio of a width ofeach of the strips having the second conductivity type within thesemiconductor to a width of each of the portions of the semiconductorhaving the first conductivity type is about 1:1.
 14. A transistor,comprising: a gate dielectric over a semiconductor having a firstconductivity type; a control gate over the gate dielectric; a pluralityof source regions having a second conductivity type in the semiconductorhaving the first conductivity type, wherein the source regions of theplurality of source regions are separated from each other by thesemiconductor having the first conductivity type, and a plurality ofdrain regions having the second conductivity type in the semiconductorhaving the first conductivity type, wherein the drain regions of theplurality of drain regions are separated from each other by thesemiconductor having the first conductivity type; and a plurality ofstrips having the second conductivity type within the semiconductorhaving the first conductivity type, the strips having the secondconductivity type within the semiconductor interposed between thecontrol gate and respective ones of the plurality of separated sourceregions and/or between the control gate and respective ones of theplurality of separated drain regions.
 15. The transistor of claim 14,wherein the plurality of source regions are at ends of the strips havingthe second conductivity type within the semiconductor interposed betweenthe control gate and the respective ones of the plurality of sourceregions and the plurality of drain regions are at ends of the stripshaving the second conductivity type within the semiconductor interposedbetween the control gate and the respective ones of the plurality ofdrain regions.
 16. The transistor of claim 14, further comprising acontact coupled to each of the plurality of source regions and to eachof the plurality of drain regions.
 17. The transistor of claim 14,wherein the strips having the second conductivity type within thesemiconductor and portions of the semiconductor having the firstconductivity type alternate.
 18. The transistor of claim 14, furthercomprising a plurality of conductor strips over the gate dielectric, theconductor strips respectively covering portions of the semiconductorhaving the first conductivity type that are between the strips havingthe second conductivity type within the semiconductor.
 19. Thetransistor of claim 18, wherein the strips having the secondconductivity type within the semiconductor and the portions of thesemiconductor having the first conductivity type that are between thestrips having the second conductivity type within the semiconductoralternate.
 20. The transistor of claim 14, wherein a number of thestrips having the second conductivity type within the semiconductorinterposed between the control gate and the respective ones of theplurality of source regions is the same as a number of the strips havingthe second conductivity type within the semiconductor interposed betweenthe control gate and the respective ones of the plurality of drainregions.